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Lecheng Intelligence Technology (Suzhou) Co., Ltd.
Phone
+86-17751173582The wafer laser annealing system features a modular design with configurable laser sources (308nm/532nm/1064nm) and high-precision air-bearing motion stage (±1μm positioning accuracy). The compact 2m×2m cleanroom-compatible system integrates real-time temperature monitoring and automatic focus adjustment for consistent process control.

Precision Annealing: 0.1-5J/cm² adjustable energy density with ±1℃ temperature control
High Throughput: Processes 100-500 sites per second (100x faster than RTP)
Selective Processing: Enables single-transistor level annealing
Non-thermal Damage: Ultra-short pulse avoids substrate heating
Smart Control: AI-based parameter optimization and defect detection
Advanced Logic Devices: Source/drain annealing for 7nm/5nm nodes
3D NAND Flash: Contact annealing for vertical memory structures
Power Devices: SiC/GaN annealing for improved mobility
CIS Manufacturing: Pixel-level performance enhancement
Advanced Packaging: Interconnect annealing for 2.5D/3D ICs
Key Performance Data:
Parameter | Specification |
|---|---|
Wafer Size | 4-12 inches |
Wavelength | 308/532/1064nm selectable |
Energy Density | 0.1-5J/cm² |
Positioning Accuracy | ±1μm |
Throughput | 100-500 sites/sec |
Temperature Control | ±1℃ |
The system's advanced process control capabilities make it ideal for next-generation semiconductor manufacturing, delivering superior device performance while maintaining high yield and throughput.
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Lecheng Intelligence Technology (Suzhou) Co., Ltd.
Phone
+86-17751173582