Silicon Carbide Ingot Laser Slicing System

Structural Features

1. High-Power Ultrafast Laser System: Utilizes picosecond/femtosecond pulsed lasers to minimize heat-affected zones (HAZ) and material damage.

2. Precision Motion Stage: Equipped with linear motor-driven systems, achieving ±1μm repeat positioning accuracy for stable and consistent cutting paths.

3. Adaptive Optical Focusing: Dynamically adjusts laser focal points to accommodate ingots of varying thicknesses, ensuring optimal cutting quality.

4. Real-Time Monitoring & Feedback: Integrated CCD vision alignment and laser ranging systems enable live process control with automatic parameter adjustment.

5. Modular Design: Supports multi-station configurations, compatible with 4-inch, 6-inch, and 8-inch ingots for enhanced flexibility.

Technical Advantages

1. Low Material Waste: Non-contact laser cutting achieves kerf widths of 20–50μm, improving material yield by over 30%.

2. High Throughput: 5–10× faster than diamond wire saws, reducing processing time to <2 hours per ingot.

3. Superior Surface Quality: Cut surface roughness (Ra) <0.5μm, minimizing post-polishing steps and costs.

4. Eco-Friendly: Eliminates cutting fluid pollution and reduces energy consumption by 40%, aligning with sustainable manufacturing.

Typical Applications

1. SiC Power Devices: Ideal for wafer preparation of MOSFETs, SBDs, and other power electronics.

2. RF Components: Enables precise slicing for GaN-on-SiC wafers in 5G base stations and satellite communication systems.

3. New Energy Vehicles: Supports SiC wafer production for EV inverters, OBC modules, and other critical components.

Specifications are indicative only - All equipment is fully customizable to your needs！