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  • Silicon Carbide Ingot Laser Slicing System
  • Silicon Carbide Ingot Laser Slicing System
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Silicon Carbide Ingot Laser Slicing System

​​Non-contact laser cutting for zero material loss.​​ High-precision slicing for superior wafer quality.​​ Automated operation boosts production efficiency.​​ Low thermal impact preserves SiC properties.​
  • Le Cheng
  • Shanghai
  • Three months
  • Fifty sets within the year

Structural Features

  1. High-Power Ultrafast Laser System: Utilizes picosecond/femtosecond pulsed lasers to minimize heat-affected zones (HAZ) and material damage.

  2. Precision Motion Stage: Equipped with linear motor-driven systems, achieving ±1μm repeat positioning accuracy for stable and consistent cutting paths.

  3. Adaptive Optical Focusing: Dynamically adjusts laser focal points to accommodate ingots of varying thicknesses, ensuring optimal cutting quality.

  4. Real-Time Monitoring & Feedback: Integrated CCD vision alignment and laser ranging systems enable live process control with automatic parameter adjustment.

  5. Modular Design: Supports multi-station configurations, compatible with 4-inch, 6-inch, and 8-inch ingots for enhanced flexibility.

Silicon Carbide Ingot Laser Slicing System

Technical Advantages

  1. Low Material Waste: Non-contact laser cutting achieves kerf widths of 20–50μm, improving material yield by over 30%.

  2. High Throughput: 5–10× faster than diamond wire saws, reducing processing time to <2 hours per ingot.

  3. Superior Surface Quality: Cut surface roughness (Ra) <0.5μm, minimizing post-polishing steps and costs.

  4. Eco-Friendly: Eliminates cutting fluid pollution and reduces energy consumption by 40%, aligning with sustainable manufacturing.

​​Silicon Carbide Ingot Cutter​

Typical Applications

  1. SiC Power Devices: Ideal for wafer preparation of MOSFETs, SBDs, and other power electronics.

  2. RF Components: Enables precise slicing for GaN-on-SiC wafers in 5G base stations and satellite communication systems.

  3. New Energy Vehicles: Supports SiC wafer production for EV inverters, OBC modules, and other critical components.

Laser Wafer Dicing System​

Specifications are indicative only - All equipment is fully customizable to your needs!

  • How long does it take from equipment ordering to official production when cooperating with Locsen?

    The overall timeline varies depending on equipment specifications and production line scale. For standalone equipment, standard models require a 45-day manufacturing cycle, with total duration (including shipping and installation) of approximately 60 days. Customized equipment requires an additional 30 days based on technical requirements. For complete line solutions: • 100MW-level production lines require ~4 months for planning, equipment manufacturing, installation, and commissioning • GW-level production lines require ~8 months We provide detailed project schedules with dedicated managers ensuring seamless coordination. Example: A client's 1GW perovskite production line was completed 15 days ahead of schedule through parallel equipment manufacturing and facility construction.
  • Does Locsen offer suitable equipment and partnership solutions for startup perovskite companies

    Locsen offers a "Phased Partnership Program" specifically designed for perovskite startups. For the initial R&D phase, we provide compact pilot-scale equipment (e.g., 10MW laser scribing systems) bundled with essential process packages to facilitate technology validation and product iteration. During scale-up phases, startups qualify for upgrade benefits: • Core modules from pilot equipment can be traded in with value deduction toward production-line machinery • Optional technical collaboration including process development support and experimental data sharing This program has successfully enabled multiple startups to transition smoothly from lab to pilot production while mitigating early-stage investment risks.
  • Can Locsen's equipment handle perovskite solar cells of varying sizes? What is the maximum supported dimension?

    Locsen's laser equipment features exceptional size compatibility, capable of processing perovskite solar cells ranging from 10cm×10cm to 2.4m×1.2m. For oversized cell processing (e.g., 12m×2.4m rigid substrates), we offer customized gantry-type laser systems with multi-laser-head synchronization to ensure both precision and throughput. • Proven Performance: Successfully processed 1.2m×0.6m cells with industry-leading scribing accuracy (±15μm) and uniformity (>98%) • Modular Design: Swappable optical modules adapt to varying thicknesses (0.1-6mm) • Smart Calibration: AI-assisted real-time beam alignment compensates for substrate warpage
  • Does Locsen provide tailored laser solutions for all key production stages of perovskite solar cells?

    Yes, Locsen provides comprehensive laser processing solutions covering the entire perovskite solar cell production chain: P0 Laser Marking: For cell identification post-film deposition P1/P2/P3 Laser Scribing: Precision patterning of • Transparent conductive layers (P1) • Perovskite active layers (P2) • Back electrodes (P3) P4 Edge Isolation: Micron-level edge trimming to prevent short-circuiting Tandem Cell Modules: Dedicated laser etching systems for multi-material layer processing Our integrated equipment ecosystem ensures all laser processing requirements are met with: • ≤20μm alignment accuracy across layers • Thermal Affect Zone controlled under 5μm • Modular platforms supporting R&D to GW-scale production
  • What composition tolerance ranges do Locsen's tools support for variant perovskite formulations?

    Locsen's laser systems demonstrate exceptional adaptability to diverse perovskite compositions. • Preloaded Parameters: Optimized settings for mainstream formulations (e.g., FAPbI₃, CsPbI₃) in the laser recipe library enable instant operator access • R&D Support: For novel compositions (e.g., Sn-based perovskites), our team delivers: Custom wavelength/fluence calibration within 72 hours Performance validation ensuring <1% PCE degradation post-processing • Smart Compensation: On-board spectroscopy modules monitor reflectivity in real-time, automatically adjusting: Pulse duration (20-500ns) Beam profile (Top-hat/Gaussian) Energy density (0.5-3J/cm²) Technical Highlights: ▸ Tolerance for ±15% stoichiometric variation in Pb:Sn ratios ▸ Support for 2D/3D hybrid phase patterning ▸ Non-contact processing avoids cross-contamination

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